Molecular beam epitaxial In2Te3 electronic devices-Reference-Cited by-同舟云学术

Molecular beam epitaxial In2Te3 electronic devices

Published:2024-06-25 Issue: Volume: Page:
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Author:

Yi Gyu-Chul¹^ORCID,Kim Imhwan¹,Ryu Jinseok²,Lee Eunsu¹,Lee Sangmin²,Lee Seokje³,Suh Wonwoo¹,Lee Jamin³,Kim Miyoung³^ORCID,Oh Hongseok⁴

Affiliation:

1. Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University

2. DEPARTMENT OF MATERIAL SCIENCE ENGINEERING and Research Institute of Advanced Materials, Seoul National University

3. Seoul National University

4. Department of Physics and Department of Intelligent Semiconductors, Soongsil University

Abstract

We report on electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In₂Te₃ grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to enhance surface coverage and large grain sizes for high-quality In₂Te₃. Scanning transmission electron microscopy (STEM) imaging demonstrated an atomically clean and abrupt interface between the In₂Te₃ and h-BN substrates. The MBE-grown In₂Te₃ FETs exhibited superior electrical properties compared to previously reported In₂Te₃ FETs, including a mobility of 6.07 cm² V⁻¹ s⁻¹, a subthreshold swing close to 6 V dec⁻¹, and an impressive on/off ratio of about 10⁵. Furthermore, the Ti/In₂Te₃ Schottky diodes exhibits a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV.

Publisher

Research Square Platform LLC

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