High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates-Reference-Cited by-同舟云学术

High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates

Published:2020-08-31 Issue:38 Volume:12 Page:43065-43072
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Aprojanz J.¹,Rosenzweig Ph.²,Nguyen T. T. Nhung¹,Karakachian H.²,Küster K.²,Starke U.²^ORCID,Lukosius M.³^ORCID,Lippert G.³,Sinterhauf A.⁴,Wenderoth M.⁴,Zakharov A. A.⁵^ORCID,Tegenkamp C.¹^ORCID

Affiliation:

1. Institut für Physik, Technische Universität Chemnitz, Chemnitz 09126, Germany

2. Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, Stuttgart 70569, Germany

3. Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany

4. IV. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany

5. MAX IV Laboratory and Lund University, Lund 22100, Sweden

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c10725

Reference41 articles.

1. Graphene is on track to deliver on its promises

2. Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene

3. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

4. Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

5. Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

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