Determining Graphene and Substrate Quality from the Coupled Hall Mobility Measurements and Theoretical Modeling-Reference-Cited by-同舟云学术

Determining Graphene and Substrate Quality from the Coupled Hall Mobility Measurements and Theoretical Modeling

Published:2023-05-22 Issue: Volume: Page:
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Container-title:2023 46th MIPRO ICT and Electronics Convention (MIPRO)
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Author:

Japec K.¹,Matić M.¹,Lukose R.²,Lisker M.²,Lukosius M.²,Poljak M.¹

Affiliation:

1. University of Zagreb,Computational Nanoelectronics Group, Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000

2. 2D Materials Group, IHP—Leibnitz Institute for High Performance Microelectronics,Frankfurt (Oder),Germany,15236

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10159631/10159632/10159692.pdf?arnumber=10159692

Reference24 articles.

1. Assessment of Electron Mobility in Ultrathin-Body InGaAs-on-Insulator MOSFETs Using Physics-Based Modeling

2. Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials

3. Simple and efficient modeling of the E–k relationship and low-field mobility in Graphene Nano-Ribbons

4. Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

5. Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

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