Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC-Reference-Cited by-同舟云学术

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

Published:2016-09-26 Issue:4 Volume:3 Page:041002
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Kruskopf Mattias,Pakdehi Davood Momeni,Pierz Klaus,Wundrack Stefan,Stosch Rainer,Dziomba Thorsten,Götz Martin,Baringhaus Jens,Aprojanz Johannes,Tegenkamp Christoph,Lidzba Jakob,Seyller Thomas,Hohls Frank,Ahlers Franz J,Schumacher Hans W

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/3/4/041002/pdf

Reference51 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Graphene: synthesis and applications

3. Homogeneous large-area graphene layer growth on6H-SiC(0001)

4. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

5. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

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