Band gap formation in graphene by in-situ doping-Reference-Cited by-同舟云学术

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Band gap formation in graphene by in-situ doping

Published:2011-05-16 Issue:20 Volume:98 Page:203102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Jeongho,Mitchel W. C.,Brown Gail J.,Elhamri Said,Grazulis Lawrence,Smith Howard E.,Pacley Shanee D.,Boeckl John J.,Eyink Kurt G.,Mou Shin,Tomich David H.,Hoelscher John E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3589364

Reference14 articles.

1. Half-metallic graphene nanoribbons

2. Energy Band-Gap Engineering of Graphene Nanoribbons

3. Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer

4. Direct observation of a widely tunable bandgap in bilayer graphene

5. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

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2. Stacking-dependent electronic properties of aluminene based multilayer van der Waals heterostructures;Computational Materials Science;2020-12

3. Molecular Beam Epitaxy of Graphene and Hexagonal Boron Nitride;Molecular Beam Epitaxy;2018

4. Modulation of the exfoliated graphene work function through cycloaddition of nitrile imines;Physical Chemistry Chemical Physics;2016

5. From Solid Carbon Sources to Graphene;Chinese Journal of Chemistry;2015-10-28

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