Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks-Reference-Cited by-同舟云学术

Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks

Published:2014-08-11 Issue:40 Volume:24 Page:6365-6371
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Mahjouri-Samani Masoud¹,Gresback Ryan¹,Tian Mengkun²,Wang Kai¹,Puretzky Alexander A.¹,Rouleau Christopher M.¹,Eres Gyula³,Ivanov Ilia N.¹,Xiao Kai¹,McGuire Michael A.³,Duscher Gerd²,Geohegan David B.¹

Affiliation:

1. Center for Nanophase Materials Sciences; Oak Ridge National Laboratory; Oak Ridge TN USA

2. Dept. of Materials Science and Engineering; University of Tennessee; Knoxville TN USA

3. Materials Science and Technology Division; Oak Ridge National Laboratory; Oak Ridge TN USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

2. Electric Field Effect in Atomically Thin Carbon Films

3. The rise of graphene

4. Two-dimensional atomic crystals

5. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

Cited by 113 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D chalcogenide heterostructures: A discussion on its synthesis, properties and emerging applications;Next Materials;2025-04

2. Energy band engineering in GaS/InS and GaSe/InS van der Waals bilayers by interlayer stacking design and applied vertical electric field - An ab-initio theoretical calculation based approach;Materials Science in Semiconductor Processing;2024-09

3. Atomistic simulations of pore-crack nano-interaction in Indium-monochalcogenides monolayers;Materials Today Communications;2024-06

4. First-principles study of the electronic and optical properties of two-dimensional PtS₂/GaS van der Waals heterostructure;Journal of Physics D: Applied Physics;2024-05-24

5. Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices;ACS Applied Nano Materials;2024-04-24