A Secondary Reaction Pathway for the Alumina Atomic Layer Deposition Process with Trimethylaluminum and Water, Revealed by Full-Range, Time-Resolved In Situ Mass Spectrometry-Reference-Cited by-同舟云学术

A Secondary Reaction Pathway for the Alumina Atomic Layer Deposition Process with Trimethylaluminum and Water, Revealed by Full-Range, Time-Resolved In Situ Mass Spectrometry

Published:2020-11-20 Issue:48 Volume:124 Page:26443-26454
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Werbrouck Andreas¹^ORCID,Shirazi Mahdi²^ORCID,Mattelaer Felix¹^ORCID,Elliott Simon D.³^ORCID,Dendooven Jolien¹^ORCID,Detavernier Christophe¹^ORCID

Affiliation:

1. Department of Solid State Sciences, Ghent University, Krijgslaan 281, Ghent 9000, Belgium

2. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands

3. Schrödinger Incorporated, 120 West 45th Street, 17th Floor, New York, New York 10036-4041, United States

Funder

Fonds Wetenschappelijk Onderzoek

Bijzonder Onderzoeksfonds

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c07602

Reference37 articles.

1. Conformality in atomic layer deposition: Current status overview of analysis and modelling

2. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

3. Atomic Layer Deposition: An Overview

4. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

5. Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion

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