Charge Redistribution in Mg-Doped p-Type MoS<sub>2</sub>/GaN Photodetectors-Reference-Cited by-同舟云学术

Charge Redistribution in Mg-Doped p-Type MoS₂/GaN Photodetectors

Author:

Cao Ben¹²,Ma Shufang¹^ORCID,Wang Wenliang²,Tang Xin²,Wang Dou¹,Shen Weikang¹,Qiu Bocang¹,Xu Bingshe¹,Li Guoqiang¹²³^ORCID

Affiliation:

1. Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi’an 710021, China

2. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

3. Guangdong Choicore Optoelectronics Co., Ltd., Heyuan 517003, China

Funder

Guangdong Science and Technology Department

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference32 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. MoSe2/p-GaN heterojunction for enhanced UV and NIR photodetector;Journal of Materials Science: Materials in Electronics;2024-01

3. Heteroepitaxial MoS₂ on Wide Bandgap Semiconductors: A Review;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27