Epitaxial Single‐Layer MoS 2 on GaN with Enhanced Valley Helicity-Reference-Cited by-同舟云学术

Epitaxial Single‐Layer MoS 2 on GaN with Enhanced Valley Helicity

Published:2017-12-19 Issue:5 Volume:30 Page:1703888
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wan Yi¹,Xiao Jun²,Li Jingzhen¹,Fang Xin¹,Zhang Kun¹,Fu Lei¹,Li Pan¹,Song Zhigang¹,Zhang Hui¹,Wang Yilun¹,Zhao Mervin²,Lu Jing¹³,Tang Ning¹³,Ran Guangzhao¹,Zhang Xiang²⁴,Ye Yu¹³^ORCID,Dai Lun¹³

Affiliation:

1. State Key Lab for Mesoscopic Physics and School of Physics Peking University Beijing 100871 P. R. China

2. NSF Nanoscale Science and Engineering Center University of California Berkeley CA 94720 USA

3. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

4. Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Funder

National Natural Science Foundation of China

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201703888

Reference28 articles.

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4. How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface

5. Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO3

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