Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse-Reference-Cited by-同舟云学术

Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Published:2020-09-22 Issue:42 Volume:12 Page:47721-47728
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Xinglai¹,Li Jing¹,Ma Zongyi¹,Zhang Jian¹,Leng Bing²,Liu Baodan¹^ORCID

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenyang 110016, China

2. Department of Plastic Surgery, The First Affiliated Hospital of China Medical University, No. 155 North Nanjing Street, Shenyang 110001, China

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Natural Science Foundation of Liaoning Province

National Natural Science Foundation of China

Shenyang Science and Technology Bureau

Shenyang National Laboratory for Materials Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c11021

Reference56 articles.

1. High-Performance WSe2 Photodetector Based on a Laser-Induced p–n Junction

2. Self-Powered Broad-band Photodetectors Based on Vertically Stacked WSe2/Bi2Te3 p–n Heterojunctions

3. Plasmonic WS2 Nanodiscs/Graphene van der Waals Heterostructure Photodetectors

4. Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

5. Two-dimensional vanadium carbide (V2CT ) MXene as supercapacitor electrode in seawater electrolyte

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