Affiliation:
1. College of Materials Science and Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 P. R. China
2. Department of Electronic Engineering Jiangnan University Wuxi Jiangsu 214122 P. R. China
3. College of Physics and Optoelectronic Engineering Zhejiang University Hangzhou 310000 P. R. China
Abstract
AbstractThe relentless advancement of van der Waals (vdW) heteroepitaxy technology has charted an expansive horizon for the integration and functionalization of heterogeneous materials. In this research, a 2D/3D vdW heterojunction photodetector based on p‐W0.09Re0.91S2/n‐GaN integrated on a Free‐standing (FS)‐GaN substrate, encompassing horizontal, quasi‐vertical, and vertical structures is have successfully fabricated. By incorporating a suite of performance enhancement strategies, including mixed‐dimensional stacking, p‐type doping, type‐II band alignment, and vertical structure design, the developed vertical structure photodetector has exhibited exceptional performance. Specifically, the detector achieves a high Responsivity of up to 497.60 A W−1, an impressive specific Detectivity of 8.41 × 1013 Jones, and a fast response speed (rise/decay time of 10 ms/20 ms). Additionally, the device is successfully applied in the realm of single‐pixel imaging, substantiating its potential for practical applications. The findings of this work not only signify notable strides in integration and optoelectronic performance within the optoelectronic device domain but also portend novel breakthroughs in imaging technology applications, bestowing renewed vigor and endless potential upon the evolution of this field.