Elimination of S Vacancy as the Cause for the n-Type Behavior of MoS2 from the First-Principles Perspective
Author:
Affiliation:
1. Institute of Material, Ningbo University of Technology, Ningbo 315016, P. R. China
2. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan
3. Faculty of Science, Ningbo University, Ningbo 315211, P. R. China
Funder
Natural Science Foundation of Ningbo
Ministry of Education of the People's Republic of China
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.8b02591
Reference43 articles.
1. Ambipolar MoS2 Thin Flake Transistors
2. Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
3. Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 Trilayer van der Waals Heterostructures
4. Ultrafast Charge Transfer in Perovskite Nanowire/2D Transition Metal Dichalcogenide Heterostructures
5. Ultrafast Energy Dissipation via Coupling with Internal and External Phonons in Two-Dimensional MoS2
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