Absorption and emission modulation in a MoS2–GaN (0001) heterostructure by interface phonon–exciton coupling-Reference-Cited by-同舟云学术

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Absorption and emission modulation in a MoS2–GaN (0001) heterostructure by interface phonon–exciton coupling

Published:2019-12-01 Issue:12 Volume:7 Page:1511
ISSN:2327-9125
Container-title:Photonics Research
language:en
Short-container-title:Photon. Res.

Author:

Poudel Yuba,Sławińska Jagoda,Gopal Priya,Seetharaman Sairaman,Hennighausen Zachariah,Kar Swastik,D’souza Francis,Nardelli Marco Buongiorno,Neogi Arup

Funder

Office of Naval Research

National Science Foundation

AMMPI

University of North Texas

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys

5. Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

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1. Optimizing optoelectronic performance: impact of polar-terminated zinc oxide on MoS₂ Van der Waals heterostructure;Journal of Physics: Condensed Matter;2024-06-26

2. Perspectives for III-nitride photonic platforms;Nano Futures;2024-05-03

3. Electron Transfer Mechanism and Nonlinear Optical Properties of Ga₂O₃/MoS₂ Nanoheterostructures: Implications for Optoelectronic Devices;ACS Applied Nano Materials;2024-04-22

4. Impact behavior of a novel GaN/MoS2 composite photodiode based thin-film by RF-sputtering for fast response photodetection application;Optical and Quantum Electronics;2024-03-26

5. Interface Properties of MoS2 van der Waals Heterojunctions with GaN;Nanomaterials;2024-01-05

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