Electron Transfer Mechanism and Nonlinear Optical Properties of Ga2O3/MoS2 Nanoheterostructures: Implications for Optoelectronic Devices
Author:
Affiliation:
1. Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, Heilongjiang Province 150025, China
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c00328
Reference70 articles.
1. Defect activity in metal halide perovskites with wide and narrow bandgap
2. Charge Density Waves in Electron-Doped Molybdenum Disulfide
3. Indirect Band Gap in Scrolled MoS2 Monolayers
4. Bandgap, Mid-Gap States, and Gating Effects in MoS2
5. Facile Fabrication of MoS2-Modified SnO2 Hybrid Nanocomposite for Ultrasensitive Humidity Sensing
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