Bromine as a Preferred Etchant for Si Surfaces in the Supersaturation Regime: Insights from Calculations of Atomic Scale Reaction Pathways
Author:
Affiliation:
1. The Abdus Salam International Centre for Theoretical Physics, Strada Costiera 11, Trieste 34151, Italy
2. Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India
Funder
Sheikh Saqr Laboratory, International Centre for Materials Science
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b04450
Reference34 articles.
1. Semiconductor surface etching by halogens: Fundamental steps
2. Halogen etching of Si via atomic-scale processes
3. High aspect ratio silicon etch: A review
4. Dry Etching of Electronic Oxides, Polymers, and Semiconductors
5. Cl Insertion onSi(100)−(2×1): Etching Under Conditions of Supersaturation
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