Cl Insertion onSi(100)−(2×1): Etching Under Conditions of Supersaturation
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.98.136104/fulltext
Reference21 articles.
1. Halogen etching of Si via atomic-scale processes
2. Vacancy-Assisted Halogen Reactions onSi(100)-(2×1)
3. Surface Modification without Desorption: Recycling of Cl onSi(100)−(2×1)
4. Steric interaction model of roughening and vacancy reorganization on halogen-terminatedSi(100)−2×1surfaces
5. Mechanism for SiCl2Formation and Desorption and the Growth of Pits in the Etching of Si(100) with Chlorine
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1. Si epitaxy on Cl-Si(100);Applied Surface Science;2022-07
2. The stability of Cl-, Br-, and I-passivated Si(100)-(2 × 1) in ambient environments for atomically-precise pattern preservation;Journal of Physics: Condensed Matter;2021-08-23
3. How dissociated fragments of multiatomic molecules saturate all active surface sites—H2O adsorption on the Si(100) surface;Journal of Physics: Condensed Matter;2021-07-30
4. AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al;The Journal of Physical Chemistry C;2021-05-19
5. Chlorine insertion and manipulation on the Si(100)- 2×1 -Cl surface in the regime of local supersaturation;Physical Review B;2020-06-05
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