Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using <i>N</i>-Halogen-succinimides-Reference-Cited by-同舟云学术

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Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

Published:2023-11-15 Issue:47 Volume:15 Page:55139-55149
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Raffaelle Patrick R.¹,Wang George T.²^ORCID,Shestopalov Alexander A.¹^ORCID

Affiliation:

1. Department of Chemical Engineering, Hajim School of Engineering and Applied Sciences, University of Rochester, Rochester, New York 14627, United States

2. Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

Funder

Division of Civil, Mechanical and Manufacturing Innovation

Sandia National Laboratories

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c13269

Reference84 articles.

1. (Invited) Current and Future Applications of ALD in Micro-Electronics

2. Thin-film electronics by atomic layer deposition

3. Optimization of Photogenerated Charge Carrier Lifetimes in ALD Grown TiO2 for Photonic Applications

4. Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices

5. Erratum: “Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties” [Appl. Phys. Lett. 109, 192903 (2016)]

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