Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface
Author:
Affiliation:
1. Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada
Funder
Canada Foundation for Innovation
Canada Research Chairs
Natural Sciences and Engineering Research Council of Canada
Mitacs
PRIMA Qu?bec
Defence Canada (Innovation for Defence Excellence and Security, IDEaS)
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c01902
Reference64 articles.
1. Direct Bandgap Group IV Epitaxy on Si for Laser Applications
2. Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys
3. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
4. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
5. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
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3. Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering;Advanced Optical Materials;2022-08-21
4. Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases;Japanese Journal of Applied Physics;2022-05-20
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