Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4889926
Reference71 articles.
1. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
2. Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions
3. Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys
4. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
5. The direct and indirect bandgaps of unstrained SixGe1−x−ySnyand their photonic device applications
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