Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy-Reference-Cited by-同舟云学术

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy

Published:2015-04-28 Issue:17 Volume:7 Page:9031-9037
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zoellner Marvin H.¹,Richard Marie-Ingrid²³,Chahine Gilbert A.²,Zaumseil Peter¹,Reich Christian¹,Capellini Giovanni¹,Montalenti Francesco⁴,Marzegalli Anna⁴,Xie Ya-Hong⁵,Schülli Tobias U.²,Häberlen Maik⁶,Storck Peter⁶,Schroeder Thomas¹⁷

Affiliation:

1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France

3. Aix-Marseille Université, CNRS, IM2NP UMR 7334, 13397 Marseille Cedex 20, France

4. Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via R. Cozzi 55, 20126 Milano, Italy

5. Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095-1595, United States

6. Siltronic AG, Hans-Seidel-Platz 4, 81737 München, Germany

7. Institute for Physics and Chemistry, Brandenburgische Technische Universität Cottbus, Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am508968b

Reference34 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. High mobility CMOS technologies using III–V/Ge channels on Si platform

3. Si/SiGe heterostructures: from material and physics to devices and circuits

4. The direct and indirect bandgaps of unstrained SixGe1−x−ySnyand their photonic device applications

5. Lasing in direct-bandgap GeSn alloy grown on Si

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