Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors-Reference-Cited by-同舟云学术

Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors

Published:2019-07-22 Issue:8 Volume:2 Page:4717-4726
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Pan Yuanyuan¹²^ORCID,Gu Jihuan²,Tang Hao²,Zhang Xiuying²^ORCID,Li Jingzhen²,Shi Bowen²,Yang Jie²,Zhang Han²^ORCID,Yan Jiahuan²,Liu Shiqi²^ORCID,Hu Han¹^ORCID,Wu Mingbo¹^ORCID,Lu Jing²³⁴

Affiliation:

1. State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao 266580, P. R. China

2. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

4. Beijing Key Laboratory for Magnetoeletric Materials and Devices (BKL-MEMD), Beijing 100871, P. R. China

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Shandong Province

China Postdoctoral Science Foundation

National Natural Science Foundation of China

PetroChina Company Limited

Publisher

American Chemical Society (ACS)