Electrical Contacts in Monolayer MoSi2N4 Transistors

Author:

Li Ying1ORCID,Xu Lianqiang2ORCID,Yang Chen1,Xu Linqiang13,Liu Shiqi4ORCID,Yang Zongmeng1ORCID,Li Qiuhui1,Dong Jichao1,Yang Jie5,Lu Jing167

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

2. School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan 756000, China

3. Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore

4. State Key Laboratory of Spintronics Devices and Technologies, Hangzhou 311305, P. R. China

5. Key Laboratory of Material Physics, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou 450001, P. R. China

6. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

7. Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, P. R. China

Funder

Peking University

National Key Research and Development Program of China

Foundation of Henan Educational Committee

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

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