Ultra‐low power consumption flexible sensing electronics by dendritic bilayer MoS2

Author:

Luo Lei12,Gao Jiuwei12,Zheng Lu123,Li Lei123,Li Weiwei123,Xu Manzhang123,Jiang Hanjun12,Li Yue12,Wu Hao123,Ji Hongjia12,Dong Xuan12,Zhao Ruoqing12,Liu Zheng45ORCID,Wang Xuewen123ORCID,Huang Wei12367

Affiliation:

1. Frontiers Science Center for Flexible Electronics & Institute of Flexible Electronics Northwestern Polytechnical University Xi'an China

2. MIIT Key Laboratory of Flexible Electronics Northwestern Polytechnical University Xi'an People's Republic of China

3. Shaanxi Key Laboratory of Flexible Electronics Northwestern Polytechnical University Xi'an People's Republic of China

4. School of Materials Science and Engineering Nanyang Technological University Singapore Singapore

5. CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza Nanyang Technological University Singapore Singapore

6. State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials Nanjing University of Posts & Telecommunications Nanjing People's Republic of China

7. Key Laboratory of Flexible Electronics and Institute of Advanced Materials Nanjing Tech University Nanjing People's Republic of China

Abstract

AbstractTwo‐dimensional transition metal dichalcogenides (2D TMDs) are promising as sensing materials for flexible electronics and wearable systems in artificial intelligence, tele‐medicine, and internet of things (IoT). Currently, the study of 2D TMDs‐based flexible strain sensors mainly focuses on improving the performance of sensitivity, response, detection resolution, cyclic stability, and so on. There are few reports on power consumption despite that it is of significant importance for wearable electronic systems. It is still challenging to effectively reduce the power consumption for prolonging the endurance of electronic systems. Herein, we propose a novel approach to realize ultra‐low power consumption strain sensors by reducing the contact resistance between metal electrodes and 2D MoS2. A dendritic bilayer MoS2 has been designed and synthesized by a modified CVD method. Large‐area edge contact has been introduced in the dendritic MoS2, resulting in decreased the contact resistance significantly. The contact resistance can be down to 5.4 kΩ μm, which is two orders of magnitude lower than the conventional MoS2 devices. We fabricate a flexible strain sensor, exhibiting superior sensitivity in detecting strains with high resolution (0.04%) and an ultra‐low power consumption (33.0 pW). This study paves the way for future wearable and flexible sensing electronics with high sensitivity and ultra‐low power consumption.image

Funder

National Key Research and Development Program of China

Northwestern Polytechnical University

Publisher

Wiley

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