An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions-Reference-Cited by-同舟云学术

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An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions

Published:2024-04-22 Issue:17 Volume:16 Page:22166-22176
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sorkin Viacheslav¹^ORCID,Zhou Hangbo¹^ORCID,Yu Zhi Gen¹^ORCID,Ang Kah-Wee²^ORCID,Zhang Yong-Wei¹^ORCID

Affiliation:

1. Agency for Science, Technology and Research (A*STAR), Institute of High Performance Computing (IHPC), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore

2. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore

Funder

Agency for Science, Technology and Research

National Research Foundation Singapore

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c02294

Reference76 articles.

1. Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials

2. Recent progress on 2D materials-based artificial synapses

3. The physics and chemistry of the Schottky barrier height

4. Large-Area, Two-Dimensional MoS2 Exfoliated on Gold: Direct Experimental Access to the Metal–Semiconductor Interface

5. Single-layer MoS2 transistors

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