Large-Area, Two-Dimensional MoS2 Exfoliated on Gold: Direct Experimental Access to the Metal–Semiconductor Interface-Reference-Cited by-同舟云学术

Large-Area, Two-Dimensional MoS2 Exfoliated on Gold: Direct Experimental Access to the Metal–Semiconductor Interface

Published:2021-06-09 Issue:24 Volume:6 Page:15929-15939
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Pollmann Erik¹^ORCID,Sleziona Stephan¹,Foller Tobias¹^ORCID,Hagemann Ulrich²^ORCID,Gorynski Claudia³,Petri Oliver¹,Madauß Lukas¹^ORCID,Breuer Lars¹^ORCID,Schleberger Marika¹^ORCID

Affiliation:

1. Faculty of Physics and CENIDE, University of Duisburg-Essen, D-47057 Duisburg, Germany

2. ICAN and CENIDE, University of Duisburg-Essen, D-47057 Duisburg, Germany

3. Faculty of Engineering and CENIDE, University Duisburg-Essen, D-47057 Duisburg, Germany

Funder

Deutsche Forschungsgemeinschaft

Universit?t Duisburg-Essen

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c01570

Reference65 articles.

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3. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

4. Single-layer MoS2 transistors

5. Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

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