Effect of Heat Budget After Capacitor Formation on the Leakage Current Characteristics of ZrO2-Based High-k Dielectrics for Next-Generation Dynamic Random-Access Memory Capacitors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
2. Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, 18448, Republic of Korea
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
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