Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties-Reference-Cited by-同舟云学术

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Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties

Published:2023-11 Issue: Volume:42 Page:103420
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Jeong Min Ji,Lee Seung Won,Shin Yoonchul,Choi Jeong-Hun,Ahn Ji-Hoon^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference32 articles.

1. Future of dynamic random-access memory as main memory

2. New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production

3. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

4. Field‐Induced Ferroelectric Hf 1‐ x Zr x O 2 Thin Films for High‐ k Dynamic Random Access Memory

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications;Journal of Alloys and Compounds;2024-10

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