Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy

Abstract

ABSTRACTPhotoluminescence measurements of Be-doped GaAs, grown by molecular beam epitaxy, were carried out at low temperature as a function of acceptor concentration. Results revealed that besides the well-defined emission, [g-g], which is exclusively relevant to acceptor impurities, an additional specific emission, temporarily denoted by [g-g]α is formed near the band-edge, when the concentration of acceptors exceeds 1×1019 cm−3:. From the viewpoint of application it was suggested that also in case of acceptors, photoluminescence spectra can be practically used for the precise determina-tion the acceptor concentration.