A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor‐associated emission in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339565
Reference17 articles.
1. New emission lines in highly carbon ion-implanted GaAs
2. Photoluminescence of very dilutely C+ion‐implanted GaAs
3. Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities
4. Selective self‐optical compensation effect for a newly discovered acceptor‐associated emission in Zn+ion‐implanted GaAs
5. Photoluminescence of Mg‐doped GaAs grown by molecular beam epitaxy using Mg3As2as a Mg source: A comparison with Mg+ion implantation
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1. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06
2. Novel optical features in Cd+ ion-implanted LEC-grown GaAs;Ion Beam Modification of Materials;1996
3. Novel optical features in Cd+ ion-implanted LEC-grown GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12
4. High‐energy implantation of Hg+ ions into GaAs grown by liquid encapsulated Czochralski method: Formation of multiple shallow emissions;Applied Physics Letters;1995-11-06
5. Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas;MRS Proceedings;1995
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