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Novel optical features in Cd+ ion-implanted LEC-grown GaAs

  • Published:1995-12 Issue:1-4 Volume:106 Page:466-470
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kawasumi Yoko,Kimura Shinji,Iida Tsutomu,Obara Akira,Shibata Hajime,Kobayashi Naoto,Tsukamoto Takeyo,Makita Yunosuke

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05

2. C+‐energy‐dependent residual ion damage in GaAs:C grown by the low‐energy ion‐beam doping method;Journal of Applied Physics;1996-10

3. High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

4. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06

5. Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy;Ion Beam Modification of Materials;1996
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