Concentration ratio dependence of selective optical compensation effect in dually Zn+and Se+ion‐implanted GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96822
Reference13 articles.
1. New emission lines in highly carbon ion-implanted GaAs
2. Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures
3. Formation of radiative complex-centers by dual implantation of C+ and O+ ions into GaAs
4. Photoluminescence of very dilutely C+ion‐implanted GaAs
5. Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions;MRS Proceedings;1998-01
2. Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
3. Photoluminescence characterization of dually Cd+ and N+ ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01
4. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06
5. Novel optical features in Cd+ ion-implanted LEC-grown GaAs;Ion Beam Modification of Materials;1996
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