Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336559
Reference11 articles.
1. Effects of MBE growth conditions on carbon contamination in GaAs
2. An optical characterization of defect levels induced by MBE growth of GaAs
3. Low‐temperature photoluminescence properties of high‐quality GaAs layers grown by molecular‐beam epitaxy
4. Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy
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