Low‐temperature photoluminescence properties of high‐quality GaAs layers grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334782
Reference12 articles.
1. The effect of As2and As4molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs
2. A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy
3. Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs
4. Luminescence properties of GaAs‐Ga1−xAlxAs double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy
5. Impurity and defect levels in beryllium‐doped GaAs grown by molecular beam epitaxy
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