A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328640
Reference25 articles.
1. Magnesium‐doped GaAs and Alx Ga1−x As by molecular beam epitaxy
2. Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy
3. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
4. Electrical characterization of n- and p- type GaAs films grown by molecular beam epitaxy
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