Anomalous photoluminescence and raman scattering behavior in heavily Mg+ ion-implanted InP-Reference-Cited by-同舟云学术

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Anomalous photoluminescence and raman scattering behavior in heavily Mg+ ion-implanted InP

Published:1991-08 Issue:2 Volume:53 Page:102-108
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Yamada A.,Makita Y.,Asakura H.,Iida T.,Kimura S.,Matsumori T.,Uekusa S.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00323867.pdf

Reference34 articles.

1. Y. Makita, T. Nomura, M. Yokota, T. Matsumori, T. Izumi, Y. Takeuchi, K. Kudo: Appl. Phys. Lett. 47, 623 (1985)

2. Y. Makita, Y. Takeuchi, N. Ohnishi, T. Nomura, K. Kudo, H. Tanaka, H.C. Lee, M. Mori, Y. Mitsuhashi: Appl. Phys. Lett. 49, 1184 (1986)

3. Y. Makita, M. Mori, N. Ohnishi, P. Phelan, T. Taguchi, Y. Sugiyama, M. Tacano: Mater. Res. Soc. Symp. Proc. 102, 175 (1988)

4. Y. Makita, H. Tanaka, M. Mori, N. Ohnishi, P. Phelan, S. Shigetomi, H. Shibata, T. Matsumori: J. Appl. Phys. 65, 248 (1989)

5. Y. Makita, A. Yamada, H. Shibata, H. Asakura, N. Ohnishi, A.C. Beye, K.M. Mayer, N. Kutsuwada: Mater. Res. Soc. Symp. Proc. 163, 115 (1990)

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1. Photoluminescence of Semi‐insulating InP Wafers Prepared by Two‐Step Wafer Annealing;Journal of The Electrochemical Society;1998-03-01

2. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06

3. Improvement of InP crystalline perfection by He+-implantation and subsequent annealing;Solid State Communications;1995-12

4. Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy;Journal of Applied Physics;1995-01

5. Ion implantation of isoelectronic impurities into InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01

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