Atom Probe Analysis of Native Oxides and the Thermal Oxide/Silicon Interface.-Reference-Cited by-同舟云学术

Atom Probe Analysis of Native Oxides and the Thermal Oxide/Silicon Interface.

Published:1984 Issue: Volume:37 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Grovenora C. R. M.,Cerezo A.,Smith G. D. W.

Abstract

AbstractThe Pulsed Laser Atom Probe has been used to determine for the first time the stoichiometry of both the native oxide on Si and of the SiO2/Si interface.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference17 articles.

1. Electronic states at the silicon-silicon dioxide interface

2. An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2interface

3. Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films

4. Stoichiometry of thin silicon oxide layers on silicon

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Native Silicon Oxide Properties Determined by Doping;Langmuir;2023-08-23

3. Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphere;Physical Review B;1988-04-15

4. Si — SiO2 Interfaces — a Hrtem Study;The Physics and Technology of Amorphous SiO2;1988

5. Study of the interfacial structure between Si (100) and thermally grown SiO2using a ball‐and‐spoke model;Journal of Applied Physics;1987-11