Preparation of Semiconductor Cross Sections by Cleaving-Reference-Cited by-同舟云学术

Preparation of Semiconductor Cross Sections by Cleaving

Published:1987 Issue: Volume:115 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Hetherington Crispin J. D.

Abstract

ABSTRACTThe practical details are presented for preparing cross-sectional samples of semiconductor epitaxial layers by cleaving. Examples of results are shown and a number of possible applications for the samples are discussed. A variation of the method can be used to prepare a TEM sample of a high Tcsuperconductor.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/AlxGa1-xAs Superstructure

2. Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-xAs Multilayer Structure

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