Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-xAs Multilayer Structure-Reference-Cited by-同舟云学术

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Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-xAs Multilayer Structure

Published:1985-12-20 Issue:Part 2, No. 12 Volume:24 Page:L905-L907
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kakibayashi Hiroshi,Nagata Fumio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 90 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical polishing method of GaAs specimens for transmission electron microscopy;Micron;2010-01

2. Mechanical Preparation Techniques;Sample Preparation Handbook for Transmission Electron Microscopy;2010

3. Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging;Scripta Materialia;2002-08

4. Al Compositional Profile In Algaas/Gaas Quantum Wells;Microscopy and Microanalysis;1999-08

5. Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs;Vacuum;1999-05

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