Is it a Right Assumption That B and Ge are Distributed Randomly After Growing a Strained HBT-Structure?

Author:

Kol'dyaev Victor I.

Abstract

AbstractIt is accepted that surface Ge atoms are considered to be responsible for the surface B segregation process. A set of original experiments is carried out. A main observation from the B and Ge profiles grown at different conditions shows that at certain conditions B is taking initiative and determine the Ge surface segregation process. basic assumptions are suggested to self-consistently explain these original experimental features and what is observed in the literature. These results have a strong implication for modeling the B diffusion in Si1-xGex where the initial conditions should be formulated accounting for the correlation in B and Ge distribution. A new assumption for the initial condition to be “all B atoms are captured by Ge” is regarded as a right one implicating that there is no any transient diffusion representing the B capturing kinetics.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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