Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics-Reference-Cited by-同舟云学术

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Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

Published:1999-03 Issue:2 Volume:17 Page:354-362
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim H.,Greene J. E.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581595

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium based photonic components toward a full silicon/germanium photonic platform;Progress in Crystal Growth and Characterization of Materials;2017-06

2. Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers;Thin Solid Films;2014-04

3. DISSOCIATION OF B2H6 AND ADSORPTION OF THE FRAGMENTS OF B2H6 ON THE STEPPED Ge(100) SURFACE;Surface Review and Letters;2012-06

4. Measurements of the Reaction−Diffusion Front of Model Chemically Amplified Photoresists with Varying Photoacid Size;Macromolecules;2006-10-26

5. Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes;Journal of Crystal Growth;2005-01

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