Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy

Abstract

We are living in the golden era of materials science. To cite but one example, consider the field of thin-film physics. Crystal growers have been moving inexorably closer to being able to deposit layers and hence to control film properties on an atom-by-atom basis. We are nearing an era in which it will be possible to deposit “designer” materials with a specified set of properties.