A model for heterogeneous growth of Si1−xGexfilms from hydrides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348466
Reference12 articles.
1. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
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3. Decomposition of silane on Si(111)‐(7×7) and Si(100)‐(2×1) surfaces below 500 °C
4. Temperature dependence of growth of GexSi1−xby ultrahigh vacuum chemical vapor deposition
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