Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1330244
Reference35 articles.
1. B‐doped fully strained Si1−xGexlayers grown on Si(001) by gas‐source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties
2. Progress in SiGe heterostructure devices
3. Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
4. Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
5. Physics and applications of GexSi1-x/Si strained-layer heterostructures
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4. Increasing the Equilibrium Solubility of Dopants in Semiconductor Multilayers and Alloys;Physical Review Letters;2008-03-11
5. Morphology, Defect Spectrum, and Photoluminescence of Thin Si[sub 0.7]Ge[sub 0.3] Layers;Journal of The Electrochemical Society;2005
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