Oxygen-Doped-Silicon/Silicon Heterointerfaces by Ion Implantation

Abstract

ABSTRACTWe have investigated oxygen ion implantation at substoichiometric doses for bandgap modification in silicon. Redistribution of the oxygen atoms during the high temperature anneal results in sharp interfaces aiding the formation of a heterojunction. A most interesting observation is the presence of donors in the vicinity of the implanted region, resulting in extensive counterdoping. Mesa type diodes on the implanted sample exhibit excellent rectification with a diode ideality factor n of 1.2 and a reverse saturation current density of 1 × 10−8 A/cm 2. The near surface region is shown to be crucial for achieving the high rectification behavior.