Fabrication and properties of polycrystalline‐SiC/Si structures for Si heterojunction devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105519
Reference6 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
3. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
4. Growth Characteristics of CVD Beta‐Silicon Carbide
5. Epitaxial growth of β–SiC on Si by low-temperature chemical vapor deposition
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