Electrical properties of oxygen thermal donors in silicon films synthesized by oxygen implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343010
Reference19 articles.
1. Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
2. Temperature dependence of Hall mobility and electrical conductivity in SIMOX films
3. Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation
4. Thermal donor and new donor generation in SOI material formed by oxygen implantation
5. Silicon‐on‐insulator material formed by oxygen implantation and high‐temperature annealing: Carrier transport, oxygen activity, and interface properties
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1. Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon;MRS Proceedings;1998-01
2. High-dose oxygen ion implanted heterointerfaces in silicon;Ion Beam Modification of Materials;1996
3. High-dose oxygen ion implanted heterointerfaces in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12
4. Transport Measurements;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995
5. Electrical transport across oxygen‐doped‐silicon buried layers by substoichiometric oxygen ion implantation in silicon;Applied Physics Letters;1993-12-06
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