Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation-Reference-Cited by-同舟云学术

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Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation

Published:1985-03 Issue:1-3 Volume:129 Page:249-254
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Cristoloveanu S.,Wyncoll J.,Spinelli P.,Hemment P.L.F.,Arrowsmith R.P.

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. A study of silicon oxides prepared by oxygen implantation into silicon

2. Proc. of Int. Ion Engin. Cong., ISIAT'83 & IPAT'83;Hemment,1983

3. Material Research Soc.;Hemment,1984

4. Electric-field-shielding layers formed by oxygen implantation into silicon

5. Electron. Mat. Conf.;Iyumi,1982

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Why the Universal Mobility Is Not;IEEE Transactions on Electron Devices;2010-06

2. Synthesis of buried insulating layers in silicon by ion implantation;Materials Chemistry and Physics;1992-06

3. Electrical properties of oxygen thermal donors in silicon films synthesized by oxygen implantation;Journal of Applied Physics;1989-02

4. Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation;Applied Physics Letters;1988-03-14

5. Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon‐on‐insulator films formed by oxygen implantation;Journal of Applied Physics;1986-11

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