Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

Author:

Hemment PLF,Maydell-Ondrusz E,Stevens KG,Kilner JA,Butcher J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference15 articles.

1. A study of silicon oxides prepared by oxygen implantation into silicon

2. Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal silicon

3. Inst. of Phys. Conf. Ser. No. 57;Hayashi,1981

4. Metastable Materials Formation by Ion Implantation;Pinizzotto,1982

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