Affiliation:
1. Institut für Angewandte Festkörperphysik der Fraunhofer‐Gesellschaft, 78 Freiburg, Germany
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
10 articles.
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1. Breakdown Voltage;Fundamentals of Power Semiconductor Devices;2018-09-29
2. Breakdown Voltage;Fundamentals of Power Semiconductor Devices;2008
3. High-dose oxygen ion implanted heterointerfaces in silicon;Ion Beam Modification of Materials;1996
4. High-dose oxygen ion implanted heterointerfaces in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12
5. Electrical transport across oxygen‐doped‐silicon buried layers by substoichiometric oxygen ion implantation in silicon;Applied Physics Letters;1993-12-06