In Situ Measurement of Stress. Included During Annealing, in A1-2%Cu Thin Films-Reference-Cited by-同舟云学术

In Situ Measurement of Stress. Included During Annealing, in A1-2%Cu Thin Films

Published:1985 Issue: Volume:47 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Townsend P. H.,Plas H. A. Vander

Abstract

ABSTRACTStress measurement in thin film systems is discussed and applied to Al-2%Cu filns on SiO2/Si substrates during thermal cycling. Plastic deformation obscrved during compressive stress relaxation is correlated with the formation of hillocks on the metal films. The effect of secondary layers of 10%Ti-90%W on the thermo-mcchanical response of Al films is examined.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. The temperature dependence of stresses in aluminum films on oxidized silicon substrates

2. 1. Paddock A. and Black J. R. ; “Hillock Formatiom on Aluminummn Thin Filmns”: Paper 98, Proc. Electrochcmn. Soc., May 5–9, 1968.

3. Insitustress measurement of refractory metal silicides during sintering

4. The tension of metallic films deposited by electrolysis

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1. Electrodes for ferroelectric thin films;Integrated Ferroelectrics;1993-12

2. A study of heating rate and texture influences on annealing hillocks by a statistical characterization of Al thin‐film topography;Journal of Applied Physics;1988-12

3. Stresses and deformation processes in thin films on substrates;Critical Reviews in Solid State and Materials Sciences;1988-01

4. Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques;Journal of Materials Research;1986-12